Non-treated low temperature indium tin oxide fabricated in oxygen-free environment to low-cost silicon-based solar technology

Abstract

80 nm nominal thick ITO thin films were deposited at room temperature and at low plasma irradiation conditions in an oxygen-free environment by magnetron sputtering. The assessment of the dependence of their structural and optoelectronic properties with the deposition parameters were determined to evaluate their potential in silicon-based solar technology. The results revealed high quality ITO thin films deposited at room temperature and at low direct-current power values up to 75 W. These films showed amorphous and polycrystalline nature, depending on the range of power used. The thin films performance was determined by the figure of merit, reaching the best material developed at room temperature and at 75 W. The successful use of ITO as an effective n-type doped film in a N–P heterojunction silicon-based protocell revealed its feasibility to make up the heterojunction showing its double role as antireflection coating and as substitute of conventional emitters in silicon solar technology. This would open new opportunities of technologically interesting materials fabricated at low manufacturing cost.