Processing and Study of Optical and Electrical

Abstract

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron

sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material.

The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61,

0.83 and 1 Pa, 300 ◦C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy

(AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical,

morphological and electrical properties of thin films as a function of the working pressure. The optical

properties of the films, such as the refractive index, the extinction coefficient and the band gap energy

were systematically studied. The optical band gap of thin films was estimated from the calculated

absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by

the working pressure. On the other hand, the lowest resistivity of 8.8 × 10−2 Ω cm−1 was achieved

by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best

optoelectronic properties. All these data revealed that the prepared thin layers would offer a good

capability to be used in photovoltaic applications.