Copper Nitride: A Versatile Semiconductor with Great Potential for Next-Generation Photovoltaics

Abstract

Copper nitride (Cu3N) has gained significant attention recently due to its potential in several

scientific and technological applications. This study focuses on using Cu3N as a solar absorber in

photovoltaic technology. Cu3N thin films were deposited on glass substrates and silicon wafers via

radio-frequency magnetron sputtering at different nitrogen flow ratios with total pressures ranging

from 1.0 to 5.0 Pa. The thin films’ structural, morphology, and chemical properties were determined

using XRD, Raman, AFM, and SEM/EDS techniques. The results revealed that the Cu3N films

exhibited a polycrystalline structure, with the preferred orientation varying from 100 to 111 depending

on the working pressure employed. Raman spectroscopy confirmed the presence of Cu-N bonds in

characteristic peaks observed in the 618–627 cm−1

range, while SEM and AFM images confirmed

the presence of uniform and smooth surface morphologies. The optical properties of the films were

investigated using UV-VIS-NIR spectroscopy and photothermal deflection spectroscopy (PDS). The

obtained band gap, refractive index, and Urbach energy values demonstrated promising optical

properties for Cu3N films, indicating their potential as solar absorbers in photovoltaic technology.

This study highlights the favourable properties of Cu3N films deposited using the RF sputtering

method, paving the way for their implementation in thin-film photovoltaic technologies. These

findings contribute to the progress and optimisation of Cu3N-based materials for efficient solar

energy conversion.