Transport Mechanisms and Dielectric Features of Mg-Doped ZnO Nanocrystals for Device Applications

dc.contributor.authorAbed, C.
dc.contributor.authorGouider Trabelsi, Amira Ben
dc.contributor.authorAlkallas, Fatemah. H.
dc.contributor.authorFernández, S.
dc.contributor.authorElhouichet, H.
dc.date.accessioned2024-05-24T07:22:37Z
dc.date.available2024-05-24T07:22:37Z
dc.date.issued2022-03-18
dc.description.abstractMagnesium-doped zinc oxide “ZnO:Mg” nanocrystals (NCs) were fabricated using a sol gel method. The Mg concentration impact on the structural, morphological, electrical, and dielectric characteristics of ZnO:Mg NCs were inspected. X-ray diffraction (XRD) patterns display the hexagonal wurtzite structure without any additional phase. TEM images revealed the nanometric size of the particles with a spherical-like shape. The electrical conductivity of the ZnO NCs, thermally activated, was found to be dependent on the Mg content. The impedance spectra were represented via a corresponding circuit formed by a resistor and constant phase element (CPE). A non-Debye type relaxation was located through the analyses of the complex impedance. The conductivity diminished with the incorporation of the Mg element. The AC conductivity is reduced by raising the temperature. Its plot obeys the Arrhenius law demonstrating a single activation energy during the conduction process. The complex impedance highlighted the existence of a Debye-type dielectric dispersion. The various ZnO:Mg samples demonstrate high values of dielectric constant with small dielectric losses for both medium and high-frequency regions. Interestingly, the Mg doping with 3% content exhibits colossal dielectric constant (more than 2 104) over wide temperature and frequency ranges, with Debye-like relaxation. The study of the electrical modulus versus the frequency and at different temperatures confirms the non-Debye relaxation. The obtained results reveal the importance of the ZnO:Mg NCs for device applications. This encourages their application in energy storage.es_ES
dc.description.sponsorshipThis research was funded by Princess Nourah bint Abdulrahman University Researchers Supporting Project number (PNURSP2022R223), Princess Nourah bint Abdulrahman University, Riyadh, Saudi Arabiaes_ES
dc.identifier.citationAbed, C.; Ben Gouider Trabelsi, A.; H. Alkallas, F.; Fernandez, S.; Elhouichet, H. Transport Mechanisms and Dielectric Features of Mg-Doped ZnO Nanocrystals for Device Applications. Materials 2022, 15, 2265. https://doi.org/10.3390/ ma15062265es_ES
dc.identifier.issn1996-1944
dc.identifier.urihttps://hdl.handle.net/20.500.14855/3006
dc.language.isoenges_ES
dc.publisherP. Davide Cozzoli and Francisca G. Caballeroes_ES
dc.relation.ispartofseriesvolume;15
dc.rights.accessRightsopen accesses_ES
dc.subjectZnO nanocrystalses_ES
dc.subjectMg dopinges_ES
dc.subjectpolaron hoppinges_ES
dc.subjecthigh-dielectric constantes_ES
dc.subjectmoduluses_ES
dc.titleTransport Mechanisms and Dielectric Features of Mg-Doped ZnO Nanocrystals for Device Applicationses_ES
dc.typejournal articlees_ES

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
materials-15-02265-CHAYMA ABED-2022.pdf
Size:
9.09 MB
Format:
Adobe Portable Document Format