Complex dielectric function of H-free a-Si films: Photovoltaic light absorber

Abstract

a-Si layers could serve as a low-cost precursor for fabricating a poly-Si absorber for photovoltaic cells. We

prepared a-Si films onto glass substrates by RF-magnetron sputtering. The Ar-gas pressure was adjusted from 0.7

to 4.5 Pa to reach average rates (!1!0 nm"s), and increase manufacturing efficiency. We analyzed the structural

and optical properties of the a-Si films using Raman and optical transmission spectroscopies. The Cody-Lorentz

model was adopted to calculate their complex refractive index.