Complex dielectric function of H-free a-Si films: Photovoltaic light absorber

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dc.contributor.authorMárquez, E.
dc.contributor.authorBallester, M.
dc.contributor.authorGarcía, M.
dc.contributor.authorCintado, M.
dc.contributor.authorMárquez, A.P.
dc.contributor.authorRuiz, J.J.
dc.contributor.authorFernández, S.M.
dc.contributor.authorBlanco, E.
dc.contributor.authorWillomitzer, F.
dc.contributor.authorKatsaggelos, A.K.
dc.date.accessioned2024-05-24T09:06:55Z
dc.date.available2024-05-24T09:06:55Z
dc.date.issued2023-05-06
dc.description.abstracta-Si layers could serve as a low-cost precursor for fabricating a poly-Si absorber for photovoltaic cells. We prepared a-Si films onto glass substrates by RF-magnetron sputtering. The Ar-gas pressure was adjusted from 0.7 to 4.5 Pa to reach average rates (!1!0 nm"s), and increase manufacturing efficiency. We analyzed the structural and optical properties of the a-Si films using Raman and optical transmission spectroscopies. The Cody-Lorentz model was adopted to calculate their complex refractive index.es_ES
dc.identifier.citationE. Marquez, M. Ballester, M. Garcia, M. Cintado, A.P. Marquez, J.J. Ruiz, S.M. Fernández, E. Blanco, F. Willomitzer, A.K. Katsaggelos, Complex dielectric function of H-free a-Si films: Photovoltaic light absorber, Materials Letters, Volume 345, 2023, 134485, https://doi.org/10.1016/j.matlet.2023.134485.es_ES
dc.identifier.issn0167-577X
dc.identifier.urihttps://hdl.handle.net/20.500.14855/3013
dc.language.isoenges_ES
dc.relation.ispartofseriesvolume;345
dc.rights.accessRightsembargoed accesses_ES
dc.subjectAMORPHOUS MATERIALes_ES
dc.subjectOPTICAL MATERIALS AND PROPERTIESes_ES
dc.titleComplex dielectric function of H-free a-Si films: Photovoltaic light absorberes_ES
dc.typejournal articlees_ES

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