Ellipsometric study on the uniformity of Al:ZnO thin films deposited using DC sputtering at room temperature over large areas

Abstract

Al-doped ZnO combines high transparency and conductivity with abundant and nontoxic elements; making it suitable for optoelectronic devices with large-scale applications. In order to check the quality of the material deposited over large areas, spectroscopic ellipsometry is a powerful technique that allows the determination of various optical and electrical parameters by applying suitable oscillator models. This technique is used here to obtain sheet resistance and visible transmittance data at several equidistant points of Al:ZnO thin films deposited using DC sputtering on 15 cm × 15 cm glass substrates. Independent measurements using other optical (spectrophotometry) and electrical (four point probe) methods show analogous visible transmittance but somewhat higher resistance values than those obtained with ellipsometry, which is explained by the contribution of grain-boundary scattering compared to in-grain properties provided using ellipsometry. However, the mapping of the data gives a similar spatial distribution to the different types of measurement; therefore, proving the capacity of ellipsometry to study with a single tool the uniformity of the optical and electrical characteristics of large areas.